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Microwave electronics center
- Six-inch GaAs line, including six-inch MBE and six-inch electron beam lithography capabilities
- Advanced processes (PHEMT, MHEMT and GaN HEMT) provide industry-leading performance.
Six-inch processes already in place:
– 0.25 µm/0.5 µm MESFET (2002)
– 0.15 µm PHEMT (2004)
– 0.1 µm PHEMT (2005) - Automated cassette-to-cassette equipment
- All gates defined using e-beam lithography
- In-house grown MBE material for precise control of structure and layer quality (PHEMT and MHEMT)
- Two-mil thickness for excellent thermal properties (power PHEMT and power MHEMT)
- Small (15 µm wide), dry-etched via slots for low-inductance device grounding (PHEMT and MHEMT)
- Stability of defense-critical foundry
| Technology | Substrate | Process | Freq. Range (GHz) | MMIC Thickness (µm) | Vgdb*/ Fmin. |
Comments |
| PHEMT | GaAs | 0.15 µm Low Noise | 1-80 | 100 | 0.9 dB @ 26 GHz |
|
| PHEMT | GaAs | 0.15 µm Power | 1-30 | 50/100 | 15V typ. | |
| PHEMT | GaAs | 0.10 µm Power | 10-100 | 50 | 11-12V typ. | Space Qualified |
| InP MHEMT | GaAs | 0.10 µm Low Noise | 1-200 | 100 | 0.5 dB @ 26 GHz | Space Qualified |
| InP MHEMT | GaAs | 0.10 µmPower | 10-150 | 50 | 7V typ. | Very High PAE |
| GaN HEMT | SiC | 0.1-0.5 µm Power | 0.1-40 | 100 | 100V typ. | High Power Density |
| *Defined at 1 mA/mm Ig | ||||||
