Monolithic 16 Mbit Radiation-Hardened SRAM

The SRAM die is a high-performance 2,097,152-word x 8-bit static random-access memory with industry-standard functionality. It is designed by BAE Systems for use in systems operating in strategic radiation environments and commercial space applications.

This SRAM is offered in three configurations: a 2M x 8 single-chip modules, a 2M x 32 multi-chip module, and a 2M x 40 multi-chip module. The SRAM operates over the full military-temperature range, and requires a single 1.5 V ± 5 percent power supply. It can also operate with dual voltage to allow interfacing with 3.3V I/O. Power consumption is typically less than 10 mW/MHz in operation, with a standby power of less than 100mW. The SRAM read operation is fully asynchronous, with an associated access time of 15 to 20 nanoseconds.

BAE Systems’ products are radiation-hardened through the use of advanced and proprietary design, layout, and process hardening techniques. The 16Mb Monolithic SRAM has a total dose tolerance of greater than 1 Mrad and an upset rate of less than 1E-12 upsets per bit day.
In late 2008, BAE Systems will offer the 16Mb Monolithic SRAM in a 512K x 32 organization.

Product list:

• P/N 8407074 – 2M x 8 SRAM
• P/N 8427352 – 512K x 32 SRAM
• P/N 8413764 – 2M x 40 SRAM

For further information please contact:

Tim Scott
9300 Wellington Rd
Manassas, VA 20110
Tel: +1 703 367 4615
timothy.scott@baesystems.com